Effect of temperature on ballistic transport in InSb quantum wells

Abstract Ballistic transport is observed in 0.5 μm long four-terminal square structures fabricated from InSb quantum wells with Al x In 1− x Sb barriers. Negative bend resistance is observed at temperatures between ∼1.5 and ∼200 K . The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths.