Crystallographic orientation dependence of dielectric response in lead strontium titanate thin films

Abstract This investigation presents the growth of (100), (110) and preferential (111)-oriented Pb 0.6 Sr 0.4 TiO 3 thin films prepared on different orientations LaNiO 3 buffered silicon substrates via radio-frequency magnetron sputtering method. The effects of the orientation on microstructure and dielectric response were systematically investigated. The capacitance–voltage property versus the crystallographic orientation analysis revealed that preferential (111)-orientation film possesses the largest relative permittivity and tunability of 1180 and 84% (at 400 kV/cm) respectively, which are much higher than those of (100)- and (110)-oriented thin films. These results suggest preferential (111)-orientation films as promising candidates for microwave tunable devices.