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Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
2007
Yanning Sun
Steven J. Koester
Edward W. Kiewra
J. P. de Souza
N. Ruiz
J. Bucchignano
A. Callegari
Keith E. Fogel
D.K. Sadana
Jean Fompeyrine
D. J. Webb
Jean-Pierre Locquet
M. Sousa
R. Germann
Keywords:
Gate oxide
High-κ dielectric
Gate dielectric
Dielectric
MOSFET
CMOS
Electronic engineering
Materials science
Optoelectronics
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