Optical Studies of Microstructure in a-Si:H
1990
A set of samples grown under different substrate temperature has been characterised by complex optical, photoelectrical and transport measurements. A very sensitive and simple method for detection of optical scattering in a device quality amorphous silicon has been demonstrated. The spectral dependence of the optical scattering coefficient αs(E) can give us information on the nature and concentration of the scattering centers in a-Si:H thin films.
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