Synthesis and structure of Mg(Fe0.8Ga0.2)2O4−δ film materials

Features of the preparation of magnetic semiconductor films with the composition Mg(Fe0.8Ga0.2)2O4−δ on a 200-nm-thick silicon substrate are presented. Both a pure substrate surface and one with protective TiO x layers with a crystallization temperature of 900–1000°C for 30 min were used. The effect of the protective layers on the formation of the surface morphology of the films and their magnetic properties is shown.