Study of SiOx decomposition kinetics and formation of si nanocrystals in an SiO2 matrix

Abstract The kinetics of the decomposition of silicon suboxides (SiO x , 0.7 x x stability is found through kinetic hindrance. Photoluminescence (PL) experiments showed that the decomposition reaction proceeds in the amorphous state with the observation of a-Si PL after high temperature anneals up to 800°C and H 2 plasma passivation.