Progressive ArF exposure tool for 65nm node lithography

To meet shrinkage demands of device pattern size, a new platform ArF exposure tool , NSR-S308F, has been developed with an extremely high NA projection lens. This equipment has been developed not only for ensuring better imaging of dry ArF, but also for achieving imaging enhancement of immersion ArF. To satisfy imaging and overlay accuracy requirements for 65nm node lithography, the heat management, body stiffness, and reaction force canceling system have been drastically improved. Optimized illumination conditions and polarized illumination 1 have been developed to expand the severe process margin for ArF dry exposure tools. In addition, some applications support: the maximization of imaging performance of S308F; the aerial image measurement function 2 to correct aberration of projection lens; the optimization software of lens aberration in a specific device pattern, and special software to realize excellent mix and match accuracy. Latest evaluation results and the improvement items of S308F will be presented.