Study of dielectric properties of resistive thin-film coatings based on silicon nitride compositions

We consider the results of dielectric properties study in millimeter band of thin-films based on silicon nitride compositions. Silicon nitride thin-film coatings were deposited on a substrate by DC magnetron sputtering. As a substrate for silicon nitride thin-film coatings a quartz plate were utilized. The ratio of argon and nitrogen in the working gas mixture was chosen as the variable parameter to control the composition of the deposited thin-film coating. Several samples of silicon nitride thin-film coatings with about 1 um thickness were fabricated. Radiophysical and dielectric properties of the fabricated SiN-type thin-film coatings were studied in millimeter wave frequency band of 50-70 GHz (V-band) with help of free space measurement method. The obtained results have shown that by controlling the resistive thin-film coating composition one can only slightly vary the radiophysical and dielectric properties of coating in millimeter-band.