Thin nickel films growth using plasma enhanced atomic layer deposition from η 3 -2-methylallyl N, N'-diisopropylacetamidinate nickel(II)

Plasma enhanced atomic layer deposition (PEALD) using the novel η 3 -2-methylallyl N,N'-diisopropylacetamidinate nickel(II) precursor has been investigated. NH 3 has been selected as the most appropriate co-reactant for the depositions. (PE)ALD saturations were observed at 200°C and 300 °C, with a deposition rate of 1.0 Å/cycle and 1.2Å/cycle respectively. No incubation time was observed with linear film growth at 300°C. Deposition on SiO 2 patterned wafer was performed and SEM image analysis showed good step coverage of close to 100%. H 2 anneal post treatment allowed to obtain very pure nickel film and resistivities value down to 9μΩ·cm, close to the resistivity value of bulk nickel (5-10μΩ·cm) [1].