Old Web
English
Sign In
Acemap
>
Paper
>
AlGaN Channel Thickness Dependence on Properties of AlGaN Channel HEMTs on High-Temperature Annealed AlN
AlGaN Channel Thickness Dependence on Properties of AlGaN Channel HEMTs on High-Temperature Annealed AlN
2021
Ryuichi Mori
Kenjiro Uesugi
Shigeyuki Kuboya
Kanako Shojiki
Hideto Miyake
Keywords:
High-electron-mobility transistor
Materials science
Channel (broadcasting)
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]