The HgCdTe electron avalanche photodiode

In this paper, a theory for avalanche gain has been developed that takes into account the unique band structure of HgCdTe with allowance being made for the relevant scattering mechanisms of both electrons and holes. These theoretical arguments justify proposition, based on experimental results, that the avalanche gain process in 2 /spl mu/m to 11 /spl mu/m cutoff photodiodes is characterised by single carrier ionisation process.