Analysis of Donor and Acceptor Concentration Effect on 65nm NMOS Device

In this paper, transition between accumulation, depletion and inversion condition of transistor with 65nm channel length as a charge controlled device is studied. As a charge controlled device, doping and acceptor concentration in the deice affect to C(V) characteristic, consequently, to transient behavior. Considerably, investigation of off-current, Short Channel Effect(SCE)s are studied. For simplicity and accuracy, quasi-static model is used to model charge distribution in junction areas within the device.