Improved Description of GAA (Gate-All-Around) MOSFET I-V Characteristics

A numerical model of GAA MOSFET has been derived to describe I-V characteristics. From a comparison of the model with the results of 2-D simulator MEDICI it is shown that the model predicts accurately the drain current from weak to strong inversion regions. Introducing the proposed surface potential model into the Francis et al. model [1], which is valid only in the subthreshold and near threshold regions, we extended its validity towards the strong inversion.