Hot-phonon-assisted additional correlation in Al0.23Ga0.77N/GaN

The hot-phonon effect is considered for an Al 0.23 Ga 0.77 N/GaN structure with a two-dimensional electron gas subjected to an electric field applied in the plane of electron confinement. The hot-phonon accumulation is taken into account in the hot-phonon lifetime approximation for the quantum well model designed through a self-consistent solution of Schrodinger and Poisson equations. The  field-dependent electron temperature and non-ohmic transport are obtained from the  Monte Carlo simulation for a 3-subband model. The longitudinal tensor component of an additional correlation of electron velocities is estimated in the hotelectron temperature approximation and an essential dependence on the hot-phonon lifetime is demonstrated. The results are in a reasonable agreement with the experimental data for a similar structure with a two-dimensional electron gas.