Design of an S-band 0.35 µm AlGaN/GaN LNA using cascode topology

This paper presents an S-band low noise amplifier that uses a two-stage configuration. The first stage has a cascode topology and the second stage has a RC feedback topology. The S-band LNA uses a 0.35 μm AlGaN/GaN HEMT on a Si-substrate. The results show a maximum gain of 17.2 dB, a minimum noise figure of 2.9 dB and an input/output return loss greater than 9.2/10 dB. The input IIP3 at 2.8 GHz is 2.5 dBm and the unit consumes 230 mW of power.