Electrical Properties of Surface Films Formed on Copper

Electrochemical and electrical properties of oxide films on Cu OFP were characterised at 80°C temperature in 0.1 M Na 2 B 4 O 7 at 2 MPa pressure in a reducing environment. The formation of oxides on copper was characterised using the conventional electrochemical techniques and the film resistance data. The electrical properties of films on Cu OFP were characterised in situ using both the Mott-Schottky analysis and the CER technique.