Integration of high performance CMOS logic LSI by applying Cu wiring to SiLKT.M./SiO2 hybrid structure : Special issue on materials-related issues for Cu interconnects used in ultra high speed large scaled integrated Si devices

This paper describes a 0.13-μm CMOS made by using highly reliable copper and SiLK T.M. (DOW CHEMICAL) interconnection technologies. We propose a hybrid interlayer structure with SiLK T.M. at the trench level and SiO 2 at the via level to improve electrical properties, mechanical strength, and reliability. Using these technologies, we made a fully functional 1.5-Mbit SRAM macro and investigated the reliability of its copper wiring in terms of electromigration.