Study on temperature field and flow field of doped oxidized silicon wafer prepared by vertical furnace

In this paper, the temperature field and flow field of the doped oxidized silicon wafer are studied by finite element simulation. The preparation parameters are optimized. The simulation results are verified by experiments. Experiment and simulation results show that the heater on the wafer surface temperature significantly affect the homogeneity. The temperature uniformity of the wafer surface at the bottom of the reaction chamber is significantly affected by the pedestal. By using the vertical diffusion furnace to prepare the doped oxidized silicon wafer, the uniformity of the film thickness is guaranteed. Finally, high quality silicon wafers are prepared in batches.