Interaction of implanted181Hf/181Ta impurities with radiation induced lattice defects in platinum

Radioactive181Hf ions were implanted into polycristalline platinum foils at 293 K. The radiation damage produced during the implantations was detected by subsequent time-differential perturbed-angular-correlation measurements of theγ-radiation emitted by the181Hf daughter181Ta. After annealing of the samples between 630 K and 850 K a large fraction of the implanted impurities interacts with well defined nearby lattice defects, which are assumed to be vacancy loops.