Transfer of Ultrathin Silicon Layers to Polycrystalline SiC Substrates for the Growth of 3C‐SiC Epitaxial Films

A novel approach for the production of large area 3C-SiC substrates is described. Ultrathin ( 1500°C) growth of epitaxial 3C-SiC. The use of more optimal growth temperatures, not limited by the melting point of Si, led to 3C-SiC films of high crystalline quality. Double-crystal X-ray diffraction measurements of the 3C-SiC(200) reflection gave peak widths of 660 arcsec.