GaInP epitaxial stacked structure and manufacturing method therefor, as well as FET transistor using this structure

Epitaxial stacked structure of GaInP, comprising: on a single crystal substrate (301) stacked from GaAs, at least a buffer layer (302), a channel layer (303) of Ga wherein the epitaxial stacked structure of GaInP comprises a region inside the electron supply layer (304), in which the gallium (Y) from the side of the junction interface with the channel layer (303) decreases toward the opposite side, and wherein the epitaxial stacked structure of GaInP characterized in that the gallium proportion of the electron supply layer (304) at the junction interface with the channel layer (303) Y = 1.0.