Point defect reaction in (Al)GaInP STQW lasers enhanced by laser operation

Abstract We have found that a large number of dislocation loops of interstitial type are introduced in the active region of (Al)GaInP strained triple quantum wells (STQW) lasers by the effect of laser operation. These loops were always generated in the lasers, the driving current of which increased gradually as operating time increased. We have shown that the dislocation cores act as nonradiative recombination centers and therefore the loops cause the gradual degradation. The migration of interstitial atoms enhanced by laser operation are essential for the degradation of the lasers.