Mosfet having 3d-structure and manufacturing method for same

One of the problems to be solved by the present invention is the provision of a basic electronic element that, even when the element size is reduced, exhibits intrinsic essential element performance that is commensurate to the element design, and an integrated semiconductor device that is configured by integrating the basic electronic element. The solution provided by the present invention is a MOS-FET having a 3D structure, the MOS-FET being provided with: a channel region that includes a plurality of different crystalline surfaces; a gate electrode that is provided facing the plurality of crystalline surfaces of the channel region; a gate insulating film that is provided between the gate electrode and the channel region; and first and second silicide regions that are provided facing each other in the direction of the flow of the channel region current so as to sandwich the channel region therebetween.