Fabrication of Carbon Nanotubes/Tungsten Disulfide Visible Spectrum Photodetector
2021
Two-dimensional-material-based photodetectors are gaining
prominence in optoelectronic applications, but there are certain factors to consider
with bulk material usage. The demand for a highly responsive and highly
efficient device with an inexpensive fabrication method is always of
paramount importance. Carbon nanotubes (CNT) are well known, owing to
their upheld vigorous structural and optoelectronic characteristics, but
to fabricate them at a large scale involves multifarious processes. A
visible range photodetector device structure developed using a simple and
inexpensive drop-casting technique is reported here. The optoelectronic
characteristics of the device are studied with IV measurements under the
light and dark conditions by incorporating a thin CNT layer on top of
tungsten-disulfide-based heterojunction photodetector to enhance the
overall characteristics such as detectivity, responsivity, photocurrent,
rise time, and fall time in the visible range of the light spectrum with a
violet light source at 441 nm. In the DC bias voltage range of −20 to 20
V, IV measurements are carried out under dark and illumination conditions
with different incident power densities. The threshold voltage is
recognized at 2.0 V. Photocurrent is found to be highly dependent on the
state of the incident light. For
0.3074mW/cm2 illuminated power, the
highest responsivity and detectivity are determined to be 0.57 A/W and
2.89×1011 Jones. These findings encourage an alternative
fabrication method at a large scale to grow CNTs for the enhancement of
optoelectronic properties of present two-dimensional-material-based
optoelectronic and photonics applications.
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