Efficient Computational Methodology of Thermo-Mechanical Phenomena in the Metal System of Power ICs

The temperature and stress distribution assessment inside the high-power Double-Diffused Metal Oxide Semiconductor (DMOS) transistors which operates under repetitive thermal cycles is required in order to design reliable devices. Prediction of such phenomena is important during design stage in order to enhance the functioning and improve the device lifetime. A Finite Element Method (FEM) simulation methodology based on a simplified Lagrange multipliers displacement method is proposed in this paper for accurately describing the performance and behaviour of DMOS devices. Results are discussed and demonstrated on a simple 3D DMOS transistor substructure and the study is extended to complex 3D DMOS model.