Atomic force microscopy investigation of polysilicon films before and after SIMS analysis: the effects of sample rotation

Differences have been found in the depth resolution of dynamic SIMS profiles from polysilicon films on silicon carried out with and without sample rotation. Corresponding differences in the surface topography have been observed using atomic force microscopy. Both amorphous and polycrystalline silicon films implanted with fluorine and arsenic and subjected to rapid thermal annealing were examined. For the polycrystalline film, conventional SIMS analysis led to a significantly roughened crater, with a somewhat lesser roughening effect in the case of the rotational SIMS. The crater in the amorphous film showed slight roughening in the conventional analysis mode whereas with rotation the crater base appears to preserve the initial topography of the film.