Doping procedure of a semiconductor material

Doping procedure of a semiconductor material, comprising the following steps: - Provide a crucible (1) containing a charge (4) of said semiconductor material, - Provide a dopant material (6) in a sacrificial container (5) closed being the sacrificial vessel (5) formed by said semiconductor material, - Insert the container (5) in the crucible (1) - Melt the contents of the crucible (1).