Characterization of ${Al_x}{Ga_{1-x}N}$ Thin Film Grown by MOCVD

thin layers are promising materials for optical devices in the UV regions. thin layers w were grown on sapphire substrates by metalorgaruc chemical vapor deposition (MOCVD). The molar Al fraction and crystallinity of layers were deduced from synchrotron x-ray scattering experiment. Surface morphology were investigated using SEM and SPM. layers crystallinity were related with undoped GaN crystallinity. The Al mole fraction of layers affect the surface morphology of layers. The surface morphology was rough­e ened and the cracks were obseed by increasing the Al mole fractions.