Forming method of resistance-type random access memory

The invention discloses a forming method of a resistance-type random access memory. The forming method comprises the following steps: using a hard mask layer with an opening as a mask, etching a top electrode layer with a first dry method etching technology until the surface of a dielectric material layer is exposed, wherein etching gas of the first dry method etching technology is CH4; continuously using the hard mask layer with the opening as the mask, etching the dielectric material layer with a second dry method etching technology until the surface of a bottom electrode layer is exposed, wherein etching gas of the second dry method etching technology is H2. According to the forming method, the etching technologies are prevented from causing etching pollution on the top electrode layer and the dielectric material layer, so that the side wall of the top electrode layer and the side wall of the dielectric material layer after etching are clean, and then the electrical property of the formed resistance-type random access memory is improved.