Investigation of LP-MOCVD-grown GaAs-GaInP multiquantum wells by reflectance anistropy

High-quality GaAs-GalnP heterojunctions, quantum wells and superlattices have been grown using low-pressure metalorganic chemical vapo deposition. We showed using photoluminescence that the growth rate of the thin layers can not be extrapolated from the thick layer growth rate. In situ reflectance anisotropy (RA) measurements were used to monitor the growth. Correlations were made between the RA signals and film quality. RA signals were also measured for GaAs quantum wells of various thickness, as well as f superlattice growth.© (1990) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.