Low frequency noise and trap density in GaN/AlGaN field effect transistors

We report experimental results on the low-frequency noise in GaN/AlGaN transistors fabricated under different conditions and evaluate different methods to extract the effective trap density using the McWhorter model. The effective trap density is found to be below 1019 cm−3 for some of the wafers. This trap density is of the same order of magnitude as that reported in Si MOSFETs with a high-k dielectric. One of the structures manifested about two orders of magnitude higher noise level. These measurements correlate with the results of secondary ion mass spectroscopy and terahertz electroluminescence measurements which indicated a ∼30% higher concentration of uncompensated oxygen in this structure. Effective trap density extracted from noise measurements is proven to be a very sensitive figure of merit parameter for the GaN/AlGaN field effect transistors and material quality assessment.We report experimental results on the low-frequency noise in GaN/AlGaN transistors fabricated under different conditions and evaluate different methods to extract the effective trap density using the McWhorter model. The effective trap density is found to be below 1019 cm−3 for some of the wafers. This trap density is of the same order of magnitude as that reported in Si MOSFETs with a high-k dielectric. One of the structures manifested about two orders of magnitude higher noise level. These measurements correlate with the results of secondary ion mass spectroscopy and terahertz electroluminescence measurements which indicated a ∼30% higher concentration of uncompensated oxygen in this structure. Effective trap density extracted from noise measurements is proven to be a very sensitive figure of merit parameter for the GaN/AlGaN field effect transistors and material quality assessment.