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Nickel Selective Etching Studies for Self-Aligned Silicide Process in Ge and SiGe-Based Devices
Nickel Selective Etching Studies for Self-Aligned Silicide Process in Ge and SiGe-Based Devices
2006
V. Carron
Mathilde Ribeiro
P. Besson
G. Rolland
Jean-Michel Hartmann
V. Loup
Stephane Minoret
Laurent Clavelier
C. Leroyer
T. Billon
Keywords:
Policide
Etching
Metallurgy
Silicide
Materials science
Nickel
Optoelectronics
Correction
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