A novel local interconnect technology (MSD) for high-performance logic LSIs with embedded SRAM

A novel local interconnect/contact technology with a self-aligned Metal-Stacked source/Drain structure (MSD) is proposed. This technology provides a self-aligned contact technology for narrow source/drain opening of 0.2 /spl mu/m width with low parasitic resistance and low junction leakage current level. Excellent cell characteristics with 6.82 /spl mu/m/sup 2/ full-CMOS SRAM have been achieved.