Evaluation of reconfigurable tunnel FETs for low power and high performance operation

Undoped channel materials and multiple independent gates allow reconfiguration of the transistor operation between n- and p-type behavior. Materials with low effective masses allow in addition to switch on demand between a highperformance (HP) and a low-power (LP) mode, operating the transistor beyond and below the 60 mV/dec subthreshold slope limit, respectively. Based on 22 nm double-pattering design rules, a reconfigurable tunnel nanoFET device architecture is proposed, which allows n/p- as well as HP/LP-mode reconfiguration. Important key performance indicators for the technology evaluation at the device level are extracted by means of an augmented driftdiffusion simulator and at the inverter level by means of an empirical compact model.