Effect of crystal disorder on linewidth of the Raman modes in GaS1-xSex layered mixed crystals
2003
The linewidths of Raman-active intralayer compressional modes in GaS1-xSex layered mixed crystals (0 ≤ x ≤ 1) have been measured in the 10-300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three-phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of the intralayer phonon lines with temperature. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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