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Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz
Submicron gate InP power MISFET's with improved output power density at 18 and 20 GHz
1991
M. D. Biedenbender
Vik J. Kapoor
K. A. Shalkhauser
L. J. Messick
R Nguyen
D. Schmitz
H Juergensen
Keywords:
Field-effect transistor
MISFET
Optoelectronics
Electrical efficiency
Power density
Fabrication
Materials science
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