High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

Jarosław Kirdoda,L. Ferre Llin,Kateryna Kuzmenko,Peter Vines,Zoe M. Greener,Derek C. S. Dumas,Ross W. Millar,Muhammad M. Mirza,Gerald S. Buller,Douglas J. Paul

High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

2019

Jarosław Kirdoda
L. Ferre Llin
Kateryna Kuzmenko
Peter Vines
Zoe M. Greener
Derek C. S. Dumas
Ross W. Millar
Muhammad M. Mirza
Gerald S. Buller
Douglas J. Paul

Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2×10−16 WHz-½ noise equivalent power. © 2019 The Author(s)

Keywords:

Detector
Noise-equivalent power
Wavelength
Planar
Avalanche diode
Optoelectronics
Physics
Single-photon avalanche diode
Jitter
Photon

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