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Acemap > Paper > Ge基板中のAs高効率活性化と低抵抗浅接合形成(MOSデバイス・メモリ高性能化-材料・プロセス技術)

Ge基板中のAs高効率活性化と低抵抗浅接合形成(MOSデバイス・メモリ高性能化-材料・プロセス技術)

2014 
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