Influence of Indium‐Nitrogen Interactions on the Local Mode Frequency of Nitrogen in GaAs‐based Dilute Nitrides

Fourier transform infrared absorption measurements have been carried out on nitrogen and indium coimplanted GaAs and nitrogen implanted InGaAs layers grown by molecular beam epitaxy. After rapid thermal annealing, additional absorption bands appear in the frequency region of the local mode of isolated substitutional nitrogen. The bands can be attributed to nitrogen bonding with nearest‐neighbor indium atoms. Using a valence‐force model, the microscopic identification of the different nitrogen configurations is possible.