High reflectivity p-type doped distributed Bragg reflectors using ZnSe/MgS superlattices

Undoped and p-type doped distributed Bragg reflectors (DBRs) have been grown by molecular beam epitaxy using ZnSe layers for the high refractive index material and ZnSe/MgS superlattices (SLs) for the low index material. The ZnSe/MgS SLs consist of 22.5 periods with a period length of 2.5 nm as confirmed by high-resolution X-ray diffraction measurements. A reflectivity of the p-type doped DBR higher than 99% at 522 nm has been achieved. The low temperature photoluminescence spectrum of the p-type doped DBR shows a strong donor-acceptor pair recombination peak at 2.686 eV.