The Influence of Bi Doping of the InAs/GaAs Quantum Dots on Morphology and Photoelectronic Properties of the Heterostructures Obtained by MOVPE

Abstract : Bi doping of InAs quantum dots layer during growth by MOVPE depresses coalescence of nanoclusters and advances obtaining more uniform distribution Of quantum dots size. Bi itself is practically not being incorporated into the QD material. Its role consists in limitation of In and As atoms diffusion mobility on the growing layer surface.