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905 nm Wavelength Laser as a Means for In Situ End‐point Detection of Dry Etching of Al x Ga1 − x As on GaAs
905 nm Wavelength Laser as a Means for In Situ End‐point Detection of Dry Etching of Al x Ga1 − x As on GaAs
1999
J.W. Lee
Russell Westerman
K.D Mackenzie
J. F. Donohue
D. Johnson
J. N. Sasserath
Kevin J. Liddane
S. J. Pearton
Keywords:
Wavelength
Analytical chemistry
Dry etching
Materials science
Laser
In situ
end point detection
Correction
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