Precise Performance Measurement of High-Efficiency Crystalline Silicon Solar Cells
2006
The effect of the sweep speed and direction on the I-V measurement of state-of-the-art high-efficiency c-Si cells and modules such as HIT and backside-contact technologies is investigated, in order to clarify the precise characterization techniques for those devices. The P max and FF of these devices with conversion efficiencies of ~20% show significant dependence on the sweep conditions by 5-10% or more, when the sweep speed is less than 50-100 msec. Their I-V measurements should be carried out in the conditions where the result is independent on both the sweep direction and speed
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
3
References
7
Citations
NaN
KQI