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Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications
Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications
2021
Xixi Jiang
Xiaobing Hu
Jihong Bian
Kai Zhang
Lin Chen
Hao Zhu
Qing-Qing Sun
David Wei Zhang
Keywords:
Field-effect transistor
Optoelectronics
Heterojunction
Ferroelectricity
Materials science
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