Self-heating and its implications on hot carrier reliability evaluations
2015
Device level Self-Heating (SH) is becoming a limiting factor during traditional DC Hot Carrier stresses in bulk and SOI technologies. Consideration is given to device layout and design for Self-Heating minimization during HCI stress in SOI technologies, the effect of SH on activation energy (Ea) and the SH induced enhancement to degradation. Applying a methodology for SH temperature correction of extracted device lifetime, correlation is established between DC device level stress and AC device stress using a specially designed ring oscillator.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
6
References
34
Citations
NaN
KQI