A new selective MOVPE regrowth process utilizing in-situ vapor phase etching for optoelectronic integrated circuits

Abstract We describe a new selective MOVPE regrowth technique combined with an in-situ vapor phase mesa-etching process and its application for the fabrication of transverse-junction buried hetero-structures. This new technique is very useful in obtaining a clean regrowth interface even if the regrowth is on AlGaAs. We have demonstrated an optoelectronic AlGaAs/GaAs hetero-transverse-junction semiconductor device fabricated by this regrowth process. The device operates as not only a laser with a threshold current of 19 mA at room temperature but also as a junction field effect transistor with a transconductance of 120 mS/mm (6.0 μm wide active region and 200 μm long cavity).