Ultra high reliability planar InGaAs PIN photodiodes produced by the MOVPE process

A planar InGaAs PIN photodiode has been developed which meets the stringent performance requirements of submarine systems. This is made possible by MOVPE epitaxial growth and the use of a planar device structure. The MOVPE growth and device structure are described, and a schematic diagram showing the photodiode structure is given. Reliability testing is discussed. >