Old Web
English
Sign In
Acemap
>
Paper
>
Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching
Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching
2011
Eriguchi Koji
Nakakubo Yoshinori
Matsuda Asahiko
Takao Yoshinori
Ono Kouichi
Keywords:
Atomic physics
MOSFET
Subthreshold conduction
Ion
Plasma etching
Analytical chemistry
Chemistry
design framework
ion bombardment
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]