Avalanche Gain in InAsyP1-y Photodetectors for Mid-IR Focal Plane Arrays

Dong-Su Kim,Stephen R. Forrest,G. H. Olsen,Michael J. Lange,Ramon U. Martinelli,N. J. Di Giuseppe

Avalanche Gain in InAsyP1-y Photodetectors for Mid-IR Focal Plane Arrays

1995

Dong-Su Kim
Stephen R. Forrest
G. H. Olsen
Michael J. Lange
Ramon U. Martinelli
N. J. Di Giuseppe

Avalanche gains >80 are observed in InAsyP1-y (0.1dark current ≥200 pA. The InAsyP1-y layers have the same lattice parameter as compositions of InxGa1-xAs which absorb wavelengths ≤2.1 μm, for use in avalanche photodiode imaging arrays operating in the mid-IR spectral range.

Keywords:

Photodetector
Focal Plane Arrays
Physics
Optics
Wavelength
light intensity
Dark current
Lattice constant
Avalanche photodiode
Optoelectronics
Electric field
Lattice (order)
Materials science

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