Porous oxide semiconductor comprising nanopores, mesopores and macropores interconnected each other in three dimension, method for preparing the same and gas sensor including the same as a gas sensing material

The present invention relates to a gas sensor comprising a nanoporous, mesoporous and macro pores are three-dimensionally interconnected porous oxide semiconductor, a method of manufacturing the same, and this gas-sensitive material, more specifically, less than 1 nm to 4 nm nano-pores having a diameter; Mesopores having a diameter of from 4 nm to 50 nm; And 100 nm to method 1 ㎛ porous oxide macro pores are typically interconnected three-dimensional having a diameter less than the semiconductor, its production and to this, the gas sensor including a gas sensitive material. According to the invention, it is possible to provide an ultra high sensitivity and high speed response oxide semiconductor type gas sensor showing the characteristics for the nano, various detected gas through the meso and macro pore control.